Chanzon TIP120 TO-220-3L NPN Darlington Power Bipolar Transistor (Pack of 10pcs)

Chanzon TIP120 TO-220-3L NPN Darlington Power Bipolar Transistor (Pack of 10pcs)

Transistor Type: High Performance NPN Darlington Bipolar Junction Transistor (Bjt). Specification: Capable of managing collector-emitter saturation voltage (VCE(sat)) at 4V, collector dissipation power (PC) up to 65W, collector current (IC) up to 5A, max voltage for collector-base (VCBO) at 60V, collector-emitter (VCEO) at 60V and emitter-base (VEBO) at 5V. Transistor Polarity: NPN Polarity ensuring efficient current flow from the collector to the emitter. Application: Ideal for usage in a variety of electronic circuits such as power supplies and motor controls, providing both switching and amplification functionalities. Package: Comes in a pack of 10, each sealed in an Anti-Static bag ensuring electrostatic protection, ESD safety, and extended shelf life.

Product Description:
Experience high-performance power transistors with our TO-220-3L Plastic-Encapsulate Transistors. Designed for medium power applications, these Darlington transistors come in both NPN (TIP120, TIP121, TIP122) and PNP (TIP125, TIP126, TIP127) configurations, ensuring compatibility for a wide range of electronic projects.
Key Features:
- Collector-Base Voltage (VCBO): 60V, 80V, 100V
- Collector-Emitter Voltage (VCEO): 60V, 80V, 100V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): Up to 5A
- Collector Power Dissipation (PC): 2W
- Thermal Resistance Junction to Ambient (RθJA): 62.5°C/W
- Thermal Resistance Junction to Case (RθJc): 1.92°C/W
- Junction Temperature (TJ): 150°C
- Storage Temperature Range (Tstg): -55°C to +150°C
Electrical Characteristics:
- Collector-Base Breakdown Voltage (V(BR)CBO): 60V, 80V, 100V at IC=1mA, IE=0
- Collector-Emitter Breakdown Voltage (VCEO(SUS)): 60V, 80V, 100V at IC=30mA, IB=0
- Collector Cut-Off Current (ICBO): 0.2mA at VCB=60V, 80V, 100V
- Emitter Cut-Off Current (IEBO): 2mA at VEB=5V, IC=0
- DC Current Gain (hFE): 1000 at VCE=3V, IC=0.5A and IC=3A
- Collector-Emitter Saturation Voltage (VCE(sat)): 2V at IC=3A, IB=12mA and 4V at IC=5A, IB=20mA
- Base-Emitter Voltage (VBE): 2.5V at VCE=3V, IC=3A
- Output Capacitance (Cob): 300pF for TIP125, TIP126, TIP127 and 200pF for TIP120, TIP121, TIP122 at VCB=10V, IE=0, f=0.1MHz